✨ New Arrivals Just Dropped!Explore
INFINEON IMT65R060M2HXUMA1 Silicon Carbide MOSFET, Single, N Channel, 41.4 A, 650 V, 0.055 ohm, HSOF
HomeStore

INFINEON IMT65R060M2HXUMA1 Silicon Carbide MOSFET, Single, N Channel, 41.4 A, 650 V, 0.055 ohm, HSOF

INFINEON IMT65R060M2HXUMA1 Silicon Carbide MOSFET, Single, N Channel, 41.4 A, 650 V, 0.055 ohm, HSOF

Product details

Technical Specifications

MOSFET Module Configuration

Single

Continuous Drain Current Id

41.4A

Drain Source On State Resistance

0.055ohm

No. of Pins

8Pins

Gate Source Threshold Voltage Max

5.6V

Operating Temperature Max

175°C

SVHC

No SVHC (21-Jan-2025)

Channel Type

N Channel

Drain Source Voltage Vds

650V

Transistor Case Style

HSOF

Rds(on) Test Voltage

20V

Power Dissipation

208W

Product Range

CoolSiC Gen 2 Series

Other details

Brand INFINEON
Part Number IMT65R060M2HXUMA1
Quantity Each (Supplied on Cut Tape)
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.
$2.60

Original: $8.66

-70%
INFINEON IMT65R060M2HXUMA1 Silicon Carbide MOSFET, Single, N Channel, 41.4 A, 650 V, 0.055 ohm, HSOF

$8.66

$2.60

More Images

INFINEON IMT65R060M2HXUMA1 Silicon Carbide MOSFET, Single, N Channel, 41.4 A, 650 V, 0.055 ohm, HSOF - Image 2

INFINEON IMT65R060M2HXUMA1 Silicon Carbide MOSFET, Single, N Channel, 41.4 A, 650 V, 0.055 ohm, HSOF

Product details

Technical Specifications

MOSFET Module Configuration

Single

Continuous Drain Current Id

41.4A

Drain Source On State Resistance

0.055ohm

No. of Pins

8Pins

Gate Source Threshold Voltage Max

5.6V

Operating Temperature Max

175°C

SVHC

No SVHC (21-Jan-2025)

Channel Type

N Channel

Drain Source Voltage Vds

650V

Transistor Case Style

HSOF

Rds(on) Test Voltage

20V

Power Dissipation

208W

Product Range

CoolSiC Gen 2 Series

Other details

Brand INFINEON
Part Number IMT65R060M2HXUMA1
Quantity Each (Supplied on Cut Tape)
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.

Product Information

Shipping & Returns

Description

Product details

Technical Specifications

MOSFET Module Configuration

Single

Continuous Drain Current Id

41.4A

Drain Source On State Resistance

0.055ohm

No. of Pins

8Pins

Gate Source Threshold Voltage Max

5.6V

Operating Temperature Max

175°C

SVHC

No SVHC (21-Jan-2025)

Channel Type

N Channel

Drain Source Voltage Vds

650V

Transistor Case Style

HSOF

Rds(on) Test Voltage

20V

Power Dissipation

208W

Product Range

CoolSiC Gen 2 Series

Other details

Brand INFINEON
Part Number IMT65R060M2HXUMA1
Quantity Each (Supplied on Cut Tape)
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.
INFINEON IMT65R060M2HXUMA1 Silicon Carbide MOSFET, Single, N Channel, 41.4 A, 650 V, 0.055 ohm, HSOF | Tanotis