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INFINEON IPB033N10N5LFATMA1 Power MOSFET, N Channel, 100 V, 120 A, 0.0027 ohm, TO-263 (D2PAK), Surface Mount IPB033N10N5LF, SP001503858
INFINEON IPB033N10N5LFATMA1 Power MOSFET, N Channel, 100 V, 120 A, 0.0027 ohm, TO-263 (D2PAK), Surface Mount IPB033N10N5LF, SP001503858
IPB033N10N5LFATMA1 is a 100V OptiMOSTM5LinearFET ideal for hot-swap and e-fuse applications.
- Very low on-resistance RDS(on)
- Wide safe operating area SOA
- N-channel, normal level
- 100% avalanche tested
- Qualified according to JEDEC for target applications
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Product details
| Channel Type: N Channel |
| Drain Source Voltage Vds: 100V |
| Continuous Drain Current Id: 120A |
| Drain Source On State Resistance: 0.0027ohm |
| Transistor Case Style: TO-263 (D2PAK) |
| Transistor Mounting: Surface Mount |
| Rds(on) Test Voltage: 10V |
| Gate Source Threshold Voltage Max: 3.3V |
| Power Dissipation: 179W |
| No. of Pins: 3Pins |
| Operating Temperature Max: 150°C |
| Product Range: OptiMOS 5 |
| Qualification: - |
| MSL: MSL 1 - Unlimited |
Other details
| Brand | INFINEON |
| Part Number | IPB033N10N5LFATMA1 |
| Quantity | Each (Supplied on Cut Tape) |
| Technical Data Sheet EN |  |
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.
$8.19
INFINEON IPB033N10N5LFATMA1 Power MOSFET, N Channel, 100 V, 120 A, 0.0027 ohm, TO-263 (D2PAK), Surface Mount IPB033N10N5LF, SP001503858—
$8.19
INFINEON IPB033N10N5LFATMA1 Power MOSFET, N Channel, 100 V, 120 A, 0.0027 ohm, TO-263 (D2PAK), Surface Mount IPB033N10N5LF, SP001503858
IPB033N10N5LFATMA1 is a 100V OptiMOSTM5LinearFET ideal for hot-swap and e-fuse applications.
- Very low on-resistance RDS(on)
- Wide safe operating area SOA
- N-channel, normal level
- 100% avalanche tested
- Qualified according to JEDEC for target applications
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Product details
| Channel Type: N Channel |
| Drain Source Voltage Vds: 100V |
| Continuous Drain Current Id: 120A |
| Drain Source On State Resistance: 0.0027ohm |
| Transistor Case Style: TO-263 (D2PAK) |
| Transistor Mounting: Surface Mount |
| Rds(on) Test Voltage: 10V |
| Gate Source Threshold Voltage Max: 3.3V |
| Power Dissipation: 179W |
| No. of Pins: 3Pins |
| Operating Temperature Max: 150°C |
| Product Range: OptiMOS 5 |
| Qualification: - |
| MSL: MSL 1 - Unlimited |
Other details
| Brand | INFINEON |
| Part Number | IPB033N10N5LFATMA1 |
| Quantity | Each (Supplied on Cut Tape) |
| Technical Data Sheet EN | |
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.
Product Information
Product Information
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Description
IPB033N10N5LFATMA1 is a 100V OptiMOSTM5LinearFET ideal for hot-swap and e-fuse applications.
- Very low on-resistance RDS(on)
- Wide safe operating area SOA
- N-channel, normal level
- 100% avalanche tested
- Qualified according to JEDEC for target applications
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Product details
| Channel Type: N Channel |
| Drain Source Voltage Vds: 100V |
| Continuous Drain Current Id: 120A |
| Drain Source On State Resistance: 0.0027ohm |
| Transistor Case Style: TO-263 (D2PAK) |
| Transistor Mounting: Surface Mount |
| Rds(on) Test Voltage: 10V |
| Gate Source Threshold Voltage Max: 3.3V |
| Power Dissipation: 179W |
| No. of Pins: 3Pins |
| Operating Temperature Max: 150°C |
| Product Range: OptiMOS 5 |
| Qualification: - |
| MSL: MSL 1 - Unlimited |
Other details
| Brand | INFINEON |
| Part Number | IPB033N10N5LFATMA1 |
| Quantity | Each (Supplied on Cut Tape) |
| Technical Data Sheet EN | |
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.
