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INFINEON IPP072N10N3GXKSA1 MOSFET Transistor, N Channel, 80 A, 100 V, 0.0062 ohm, 10 V, 2.7 V

INFINEON IPP072N10N3GXKSA1 MOSFET Transistor, N Channel, 80 A, 100 V, 0.0062 ohm, 10 V, 2.7 V

The IPP072N10N3 G is an OptiMOS� N-channel Power MOSFET offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS (ON) and FOM.
  • World's lowest RDS (ON)
  • Very low Qg�and Qgd
  • Excellent gate charge x RDS (ON)�product (FOM)
  • Environmentally friendly
  • Increased efficiency
  • Highest power density
  • Less paralleling required
  • Smallest board-space consumption
  • Easy-to-design products
  • Halogen-free
  • MSL1 rated 2

Applications

Power Management, Audio, Motor Drive & Control, Industrial, Automotive

Product details

Power Dissipation Pd 150W
Operating Temperature Max 175�C
Continuous Drain Current Id 80A
Transistor Polarity N Channel
No. of Pins 3Pins
Threshold Voltage Vgs 2.7V
Product Range -
Automotive Qualification Standard -
Drain Source Voltage Vds 100V
Rds(on) Test Voltage Vgs 10V
Transistor Case Style TO-220
On Resistance Rds(on) 0.0062ohm
MSL MSL 1 - Unlimited

Other details

Brand INFINEON
Part Number IPP072N10N3GXKSA1
Quantity Each
Technical Data Sheet EN Download technical document - datasheet - Tanotis India
Product Change Notice EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.

$4.53
INFINEON IPP072N10N3GXKSA1 MOSFET Transistor, N Channel, 80 A, 100 V, 0.0062 ohm, 10 V, 2.7 V
$4.53

INFINEON IPP072N10N3GXKSA1 MOSFET Transistor, N Channel, 80 A, 100 V, 0.0062 ohm, 10 V, 2.7 V

The IPP072N10N3 G is an OptiMOS� N-channel Power MOSFET offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS (ON) and FOM.
  • World's lowest RDS (ON)
  • Very low Qg�and Qgd
  • Excellent gate charge x RDS (ON)�product (FOM)
  • Environmentally friendly
  • Increased efficiency
  • Highest power density
  • Less paralleling required
  • Smallest board-space consumption
  • Easy-to-design products
  • Halogen-free
  • MSL1 rated 2

Applications

Power Management, Audio, Motor Drive & Control, Industrial, Automotive

Product details

Power Dissipation Pd 150W
Operating Temperature Max 175�C
Continuous Drain Current Id 80A
Transistor Polarity N Channel
No. of Pins 3Pins
Threshold Voltage Vgs 2.7V
Product Range -
Automotive Qualification Standard -
Drain Source Voltage Vds 100V
Rds(on) Test Voltage Vgs 10V
Transistor Case Style TO-220
On Resistance Rds(on) 0.0062ohm
MSL MSL 1 - Unlimited

Other details

Brand INFINEON
Part Number IPP072N10N3GXKSA1
Quantity Each
Technical Data Sheet EN Download technical document - datasheet - Tanotis India
Product Change Notice EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.

Product Information

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Description

The IPP072N10N3 G is an OptiMOS� N-channel Power MOSFET offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS (ON) and FOM.
  • World's lowest RDS (ON)
  • Very low Qg�and Qgd
  • Excellent gate charge x RDS (ON)�product (FOM)
  • Environmentally friendly
  • Increased efficiency
  • Highest power density
  • Less paralleling required
  • Smallest board-space consumption
  • Easy-to-design products
  • Halogen-free
  • MSL1 rated 2

Applications

Power Management, Audio, Motor Drive & Control, Industrial, Automotive

Product details

Power Dissipation Pd 150W
Operating Temperature Max 175�C
Continuous Drain Current Id 80A
Transistor Polarity N Channel
No. of Pins 3Pins
Threshold Voltage Vgs 2.7V
Product Range -
Automotive Qualification Standard -
Drain Source Voltage Vds 100V
Rds(on) Test Voltage Vgs 10V
Transistor Case Style TO-220
On Resistance Rds(on) 0.0062ohm
MSL MSL 1 - Unlimited

Other details

Brand INFINEON
Part Number IPP072N10N3GXKSA1
Quantity Each
Technical Data Sheet EN Download technical document - datasheet - Tanotis India
Product Change Notice EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.

INFINEON IPP072N10N3GXKSA1 MOSFET Transistor, N Channel, 80 A, 100 V, 0.0062 ohm, 10 V, 2.7 V | Tanotis