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INFINEON IPP65R225C7XKSA1 Power MOSFET, N Channel, 11 A, 650 V, 0.199 ohm, 10 V, 3.5 V
The IPP65R225C7 is a 650V CoolMOS� C7 N-channel Power MOSFET features lower gate charge. This CoolMOS� is a revolutionary technology for high voltage power MOSFET, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. The CoolMOS� C7 combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super-junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
- Revolutionary best-in-class RDS (ON)
- Reduced energy stored in output capacitance (EOSS)
- Space saving through use of smaller packages or reduction of parts
- Improved safety margin and suitable for both SMPS and Solar Inverter applications
- Lowest conduction losses
- Low switching losses
- Better light load efficiency
- Increasing power density
- Outstanding CoolMOS� quality
Applications
Industrial, Power Management, Alternative Energy, Communications & Networking
Footnotes
For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended.
Product details
| Power Dissipation Pd | 63W |
| Operating Temperature Max | 150�C |
| Continuous Drain Current Id | 11A |
| Transistor Polarity | N Channel |
| No. of Pins | 3Pins |
| Threshold Voltage Vgs | 3.5V |
| Product Range | - |
| Drain Source Voltage Vds | 650V |
| Rds(on) Test Voltage Vgs | 10V |
| Transistor Case Style | TO-220 |
| On Resistance Rds(on) | 0.199ohm |
| MSL | MSL 1 - Unlimited |
Other details
| Brand | INFINEON |
| Part Number | IPP65R225C7XKSA1 |
| Quantity | Each |
| Technical Data Sheet EN |  |
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.
$3.81
INFINEON IPP65R225C7XKSA1 Power MOSFET, N Channel, 11 A, 650 V, 0.199 ohm, 10 V, 3.5 V—
$3.81
INFINEON IPP65R225C7XKSA1 Power MOSFET, N Channel, 11 A, 650 V, 0.199 ohm, 10 V, 3.5 V
The IPP65R225C7 is a 650V CoolMOS� C7 N-channel Power MOSFET features lower gate charge. This CoolMOS� is a revolutionary technology for high voltage power MOSFET, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. The CoolMOS� C7 combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super-junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
- Revolutionary best-in-class RDS (ON)
- Reduced energy stored in output capacitance (EOSS)
- Space saving through use of smaller packages or reduction of parts
- Improved safety margin and suitable for both SMPS and Solar Inverter applications
- Lowest conduction losses
- Low switching losses
- Better light load efficiency
- Increasing power density
- Outstanding CoolMOS� quality
Applications
Industrial, Power Management, Alternative Energy, Communications & Networking
Footnotes
For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended.
Product details
| Power Dissipation Pd | 63W |
| Operating Temperature Max | 150�C |
| Continuous Drain Current Id | 11A |
| Transistor Polarity | N Channel |
| No. of Pins | 3Pins |
| Threshold Voltage Vgs | 3.5V |
| Product Range | - |
| Drain Source Voltage Vds | 650V |
| Rds(on) Test Voltage Vgs | 10V |
| Transistor Case Style | TO-220 |
| On Resistance Rds(on) | 0.199ohm |
| MSL | MSL 1 - Unlimited |
Other details
| Brand | INFINEON |
| Part Number | IPP65R225C7XKSA1 |
| Quantity | Each |
| Technical Data Sheet EN | |
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.
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Description
The IPP65R225C7 is a 650V CoolMOS� C7 N-channel Power MOSFET features lower gate charge. This CoolMOS� is a revolutionary technology for high voltage power MOSFET, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. The CoolMOS� C7 combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super-junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
- Revolutionary best-in-class RDS (ON)
- Reduced energy stored in output capacitance (EOSS)
- Space saving through use of smaller packages or reduction of parts
- Improved safety margin and suitable for both SMPS and Solar Inverter applications
- Lowest conduction losses
- Low switching losses
- Better light load efficiency
- Increasing power density
- Outstanding CoolMOS� quality
Applications
Industrial, Power Management, Alternative Energy, Communications & Networking
Footnotes
For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended.
Product details
| Power Dissipation Pd | 63W |
| Operating Temperature Max | 150�C |
| Continuous Drain Current Id | 11A |
| Transistor Polarity | N Channel |
| No. of Pins | 3Pins |
| Threshold Voltage Vgs | 3.5V |
| Product Range | - |
| Drain Source Voltage Vds | 650V |
| Rds(on) Test Voltage Vgs | 10V |
| Transistor Case Style | TO-220 |
| On Resistance Rds(on) | 0.199ohm |
| MSL | MSL 1 - Unlimited |
Other details
| Brand | INFINEON |
| Part Number | IPP65R225C7XKSA1 |
| Quantity | Each |
| Technical Data Sheet EN | |
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.
