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Vishay SIS472BDN-T1-GE3 Mosfet Transistor N Channel 38.3 A 30 V 0.006 ohm 10 2.4
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Vishay SIS472BDN-T1-GE3 Mosfet Transistor N Channel 38.3 A 30 V 0.006 ohm 10 2.4

Vishay SIS472BDN-T1-GE3 Mosfet Transistor N Channel 38.3 A 30 V 0.006 ohm 10 2.4

This is a MOSFET Transistor, N Channel, 38.3 A, 30 V, 0.006 ohm, 10 V, 2.4 V product from VISHAY with the model number SIS472BDN-T1-GE3

Product details

Transistor Polarity N Channel
Continuous Drain Current Id 38.3A
Drain Source Voltage Vds 30V
On Resistance Rds(on) 0.006ohm
Rds(on) Test Voltage Vgs 10V
Threshold Voltage Vgs 2.4V
Power Dissipation Pd 19.8W
Transistor Case Style PowerPAK 1212
No. of Pins 8Pins
Operating Temperature Max 150°C
Product Range TrenchFET Gen IV Series
Automotive Qualification Standard -
MSL MSL 1 - Unlimited

Other details

Brand VISHAY
Part Number SIS472BDN-T1-GE3
Quantity Each (Supplied on Cut Tape)
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.

$0.46

Original: $1.54

-70%
Vishay SIS472BDN-T1-GE3 Mosfet Transistor N Channel 38.3 A 30 V 0.006 ohm 10 2.4

$1.54

$0.46

Vishay SIS472BDN-T1-GE3 Mosfet Transistor N Channel 38.3 A 30 V 0.006 ohm 10 2.4

This is a MOSFET Transistor, N Channel, 38.3 A, 30 V, 0.006 ohm, 10 V, 2.4 V product from VISHAY with the model number SIS472BDN-T1-GE3

Product details

Transistor Polarity N Channel
Continuous Drain Current Id 38.3A
Drain Source Voltage Vds 30V
On Resistance Rds(on) 0.006ohm
Rds(on) Test Voltage Vgs 10V
Threshold Voltage Vgs 2.4V
Power Dissipation Pd 19.8W
Transistor Case Style PowerPAK 1212
No. of Pins 8Pins
Operating Temperature Max 150°C
Product Range TrenchFET Gen IV Series
Automotive Qualification Standard -
MSL MSL 1 - Unlimited

Other details

Brand VISHAY
Part Number SIS472BDN-T1-GE3
Quantity Each (Supplied on Cut Tape)
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.

Product Information

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Description

This is a MOSFET Transistor, N Channel, 38.3 A, 30 V, 0.006 ohm, 10 V, 2.4 V product from VISHAY with the model number SIS472BDN-T1-GE3

Product details

Transistor Polarity N Channel
Continuous Drain Current Id 38.3A
Drain Source Voltage Vds 30V
On Resistance Rds(on) 0.006ohm
Rds(on) Test Voltage Vgs 10V
Threshold Voltage Vgs 2.4V
Power Dissipation Pd 19.8W
Transistor Case Style PowerPAK 1212
No. of Pins 8Pins
Operating Temperature Max 150°C
Product Range TrenchFET Gen IV Series
Automotive Qualification Standard -
MSL MSL 1 - Unlimited

Other details

Brand VISHAY
Part Number SIS472BDN-T1-GE3
Quantity Each (Supplied on Cut Tape)
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.

Vishay SIS472BDN-T1-GE3 Mosfet Transistor N Channel 38.3 A 30 V 0.006 ohm 10 2.4 | Tanotis