Cypress - Infineon Technologies FM1808B-SG Ferroelectric RAM (FRAM) 256 Kbit (32K x 8) Parallel 70 ns Access 4.5 V to 5.5 Supply SOIC-28
Cypress - Infineon Technologies FM1808B-SG Ferroelectric RAM (FRAM) 256 Kbit (32K x 8) Parallel 70 ns Access 4.5 V to 5.5 Supply SOIC-28
- 256Kbit (32 K � 8) Bytewide F-RAM memory
- High-endurance 100 trillion (1014) read/writes
- 151-year data retention
- Advanced high-reliability ferroelectric process
- Industry-standard 32 K � 8 SRAM and EEPROM pinout
- 70-ns access time, 130-ns cycle time
- Superior to battery-backed SRAM modules
- Low power consumption(active current 15mA (max), standby current 25µA (typ))
- Voltage operation: VDD = 4.5V to 5.5V
- Industrial temperature range from -40�C to +85�C
Other details
| Brand | CYPRESS - INFINEON TECHNOLOGIES |
| Part Number | FM1808B-SG |
| Quantity | Each |
| Technical Data Sheet EN |  |
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.
Cypress - Infineon Technologies FM1808B-SG Ferroelectric RAM (FRAM) 256 Kbit (32K x 8) Parallel 70 ns Access 4.5 V to 5.5 Supply SOIC-28
- 256Kbit (32 K � 8) Bytewide F-RAM memory
- High-endurance 100 trillion (1014) read/writes
- 151-year data retention
- Advanced high-reliability ferroelectric process
- Industry-standard 32 K � 8 SRAM and EEPROM pinout
- 70-ns access time, 130-ns cycle time
- Superior to battery-backed SRAM modules
- Low power consumption(active current 15mA (max), standby current 25µA (typ))
- Voltage operation: VDD = 4.5V to 5.5V
- Industrial temperature range from -40�C to +85�C
Other details
| Brand | CYPRESS - INFINEON TECHNOLOGIES |
| Part Number | FM1808B-SG |
| Quantity | Each |
| Technical Data Sheet EN | |
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.
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Description
- 256Kbit (32 K � 8) Bytewide F-RAM memory
- High-endurance 100 trillion (1014) read/writes
- 151-year data retention
- Advanced high-reliability ferroelectric process
- Industry-standard 32 K � 8 SRAM and EEPROM pinout
- 70-ns access time, 130-ns cycle time
- Superior to battery-backed SRAM modules
- Low power consumption(active current 15mA (max), standby current 25µA (typ))
- Voltage operation: VDD = 4.5V to 5.5V
- Industrial temperature range from -40�C to +85�C
Other details
| Brand | CYPRESS - INFINEON TECHNOLOGIES |
| Part Number | FM1808B-SG |
| Quantity | Each |
| Technical Data Sheet EN | |
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.
