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Infineon IKW50N60H3FKSA1 Igbt 100 A 1.85 V 333 W 600 TO-247 3 Pins
The IKW50N60H3 is a High Speed IGBT in Trench and field-stop technology with soft, fast recovery anti-parallel diode. The high speed device is used to reduce the size of the active components (25 to 70kHz). The high speed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-OFF switching behaviour, leading to low turn-OFF losses.
- Designed specifically to replace planar MOSFETs in applications switching @ frequencies below 70kHz
- Low switching losses for high efficiency
- Fast switching behaviour with low EMI emissions
- Optimized diode for target applications, meaning further improvement in switching losses
- Low gate resistor selection possible (down to 5R) whilst maintaining excellent switching behaviour
- Short-circuit capability
- Excellent performance
- Low switching and conduction losses
- Very good EMI behaviour
- Small gate resistor for reduced delay time and voltage overshoot
- Best-in-class IGBT efficiency and EMI behaviour
- Packaged with and without freewheeling diode for increased design freedom
- Green product
- Halogen-free
Alternative Energy, Power Management
Warnings Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.Other details
| Brand | INFINEON |
| Part Number | IKW50N60H3FKSA1 |
| Quantity | Each |
| Technical Data Sheet EN |  |
| Simulation Model EN | |
| Application Note EN | |
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.
$7.69
Infineon IKW50N60H3FKSA1 Igbt 100 A 1.85 V 333 W 600 TO-247 3 Pins—
$7.69
Infineon IKW50N60H3FKSA1 Igbt 100 A 1.85 V 333 W 600 TO-247 3 Pins
The IKW50N60H3 is a High Speed IGBT in Trench and field-stop technology with soft, fast recovery anti-parallel diode. The high speed device is used to reduce the size of the active components (25 to 70kHz). The high speed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-OFF switching behaviour, leading to low turn-OFF losses.
- Designed specifically to replace planar MOSFETs in applications switching @ frequencies below 70kHz
- Low switching losses for high efficiency
- Fast switching behaviour with low EMI emissions
- Optimized diode for target applications, meaning further improvement in switching losses
- Low gate resistor selection possible (down to 5R) whilst maintaining excellent switching behaviour
- Short-circuit capability
- Excellent performance
- Low switching and conduction losses
- Very good EMI behaviour
- Small gate resistor for reduced delay time and voltage overshoot
- Best-in-class IGBT efficiency and EMI behaviour
- Packaged with and without freewheeling diode for increased design freedom
- Green product
- Halogen-free
Alternative Energy, Power Management
Warnings Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.Other details
| Brand | INFINEON |
| Part Number | IKW50N60H3FKSA1 |
| Quantity | Each |
| Technical Data Sheet EN | |
| Simulation Model EN | |
| Application Note EN | |
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.
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Product Information
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Description
The IKW50N60H3 is a High Speed IGBT in Trench and field-stop technology with soft, fast recovery anti-parallel diode. The high speed device is used to reduce the size of the active components (25 to 70kHz). The high speed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-OFF switching behaviour, leading to low turn-OFF losses.
- Designed specifically to replace planar MOSFETs in applications switching @ frequencies below 70kHz
- Low switching losses for high efficiency
- Fast switching behaviour with low EMI emissions
- Optimized diode for target applications, meaning further improvement in switching losses
- Low gate resistor selection possible (down to 5R) whilst maintaining excellent switching behaviour
- Short-circuit capability
- Excellent performance
- Low switching and conduction losses
- Very good EMI behaviour
- Small gate resistor for reduced delay time and voltage overshoot
- Best-in-class IGBT efficiency and EMI behaviour
- Packaged with and without freewheeling diode for increased design freedom
- Green product
- Halogen-free
Alternative Energy, Power Management
Warnings Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.Other details
| Brand | INFINEON |
| Part Number | IKW50N60H3FKSA1 |
| Quantity | Each |
| Technical Data Sheet EN | |
| Simulation Model EN | |
| Application Note EN | |
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.
