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INFINEON IMBG120R034M2HXTMA1 Silicon Carbide MOSFET, Single, N Channel, 58 A, 1.2 kV, 0.034 ohm, TO-263 (D2PAK)
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INFINEON IMBG120R034M2HXTMA1 Silicon Carbide MOSFET, Single, N Channel, 58 A, 1.2 kV, 0.034 ohm, TO-263 (D2PAK)

INFINEON IMBG120R034M2HXTMA1 Silicon Carbide MOSFET, Single, N Channel, 58 A, 1.2 kV, 0.034 ohm, TO-263 (D2PAK)

Product details

Technical Specifications

MOSFET Module Configuration

Single

Continuous Drain Current Id

58A

Drain Source On State Resistance

0.034ohm

No. of Pins

7Pins

Gate Source Threshold Voltage Max

5.1V

Operating Temperature Max

175°C

SVHC

No SVHC (21-Jan-2025)

Channel Type

N Channel

Drain Source Voltage Vds

1.2kV

Transistor Case Style

TO-263 (D2PAK)

Rds(on) Test Voltage

18V

Power Dissipation

278W

Product Range

CoolSiC Gen 2 Series

Other details

Brand INFINEON
Part Number IMBG120R034M2HXTMA1
Quantity Each (Supplied on Cut Tape)
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.
$15.32
INFINEON IMBG120R034M2HXTMA1 Silicon Carbide MOSFET, Single, N Channel, 58 A, 1.2 kV, 0.034 ohm, TO-263 (D2PAK)
$15.32

INFINEON IMBG120R034M2HXTMA1 Silicon Carbide MOSFET, Single, N Channel, 58 A, 1.2 kV, 0.034 ohm, TO-263 (D2PAK)

Product details

Technical Specifications

MOSFET Module Configuration

Single

Continuous Drain Current Id

58A

Drain Source On State Resistance

0.034ohm

No. of Pins

7Pins

Gate Source Threshold Voltage Max

5.1V

Operating Temperature Max

175°C

SVHC

No SVHC (21-Jan-2025)

Channel Type

N Channel

Drain Source Voltage Vds

1.2kV

Transistor Case Style

TO-263 (D2PAK)

Rds(on) Test Voltage

18V

Power Dissipation

278W

Product Range

CoolSiC Gen 2 Series

Other details

Brand INFINEON
Part Number IMBG120R034M2HXTMA1
Quantity Each (Supplied on Cut Tape)
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.

Product Information

Shipping & Returns

Description

Product details

Technical Specifications

MOSFET Module Configuration

Single

Continuous Drain Current Id

58A

Drain Source On State Resistance

0.034ohm

No. of Pins

7Pins

Gate Source Threshold Voltage Max

5.1V

Operating Temperature Max

175°C

SVHC

No SVHC (21-Jan-2025)

Channel Type

N Channel

Drain Source Voltage Vds

1.2kV

Transistor Case Style

TO-263 (D2PAK)

Rds(on) Test Voltage

18V

Power Dissipation

278W

Product Range

CoolSiC Gen 2 Series

Other details

Brand INFINEON
Part Number IMBG120R034M2HXTMA1
Quantity Each (Supplied on Cut Tape)
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.
INFINEON IMBG120R034M2HXTMA1 Silicon Carbide MOSFET, Single, N Channel, 58 A, 1.2 kV, 0.034 ohm, TO-263 (D2PAK) | Tanotis