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INFINEON IMBG120R078M2HXTMA1 Silicon Carbide MOSFET, Single, N Channel, 29 A, 1.2 kV, 0.0781 ohm, TO-263HV
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INFINEON IMBG120R078M2HXTMA1 Silicon Carbide MOSFET, Single, N Channel, 29 A, 1.2 kV, 0.0781 ohm, TO-263HV

INFINEON IMBG120R078M2HXTMA1 Silicon Carbide MOSFET, Single, N Channel, 29 A, 1.2 kV, 0.0781 ohm, TO-263HV

Product details

Technical Specifications

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MOSFET Module Configuration

Single

Continuous Drain Current Id
29A
Open menu
Drain Source On State Resistance
0.0781ohm
Open menu
No. of Pins
7Pins
Open menu
Gate Source Threshold Voltage Max
5.1V
Open menu
Operating Temperature Max

175°C

SVHC

No SVHC (21-Jan-2025)

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Channel Type

N Channel

Drain Source Voltage Vds
1.2kV
Open menu
Transistor Case Style
TO-263HV
Open menu
Rds(on) Test Voltage
18V
Open menu
Power Dissipation
158W
Open menu
Product Range

CoolSiC Gen 2 Series

Other details

Brand INFINEON
Part Number IMBG120R078M2HXTMA1
Quantity Each (Supplied on Cut Tape)
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.
$3.26

Original: $10.87

-70%
INFINEON IMBG120R078M2HXTMA1 Silicon Carbide MOSFET, Single, N Channel, 29 A, 1.2 kV, 0.0781 ohm, TO-263HV

$10.87

$3.26

INFINEON IMBG120R078M2HXTMA1 Silicon Carbide MOSFET, Single, N Channel, 29 A, 1.2 kV, 0.0781 ohm, TO-263HV

Product details

Technical Specifications

Find similar products
MOSFET Module Configuration

Single

Continuous Drain Current Id
29A
Open menu
Drain Source On State Resistance
0.0781ohm
Open menu
No. of Pins
7Pins
Open menu
Gate Source Threshold Voltage Max
5.1V
Open menu
Operating Temperature Max

175°C

SVHC

No SVHC (21-Jan-2025)

Find similar products
Channel Type

N Channel

Drain Source Voltage Vds
1.2kV
Open menu
Transistor Case Style
TO-263HV
Open menu
Rds(on) Test Voltage
18V
Open menu
Power Dissipation
158W
Open menu
Product Range

CoolSiC Gen 2 Series

Other details

Brand INFINEON
Part Number IMBG120R078M2HXTMA1
Quantity Each (Supplied on Cut Tape)
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.

Product Information

Shipping & Returns

Description

Product details

Technical Specifications

Find similar products
MOSFET Module Configuration

Single

Continuous Drain Current Id
29A
Open menu
Drain Source On State Resistance
0.0781ohm
Open menu
No. of Pins
7Pins
Open menu
Gate Source Threshold Voltage Max
5.1V
Open menu
Operating Temperature Max

175°C

SVHC

No SVHC (21-Jan-2025)

Find similar products
Channel Type

N Channel

Drain Source Voltage Vds
1.2kV
Open menu
Transistor Case Style
TO-263HV
Open menu
Rds(on) Test Voltage
18V
Open menu
Power Dissipation
158W
Open menu
Product Range

CoolSiC Gen 2 Series

Other details

Brand INFINEON
Part Number IMBG120R078M2HXTMA1
Quantity Each (Supplied on Cut Tape)
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.
INFINEON IMBG120R078M2HXTMA1 Silicon Carbide MOSFET, Single, N Channel, 29 A, 1.2 kV, 0.0781 ohm, TO-263HV | Tanotis