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INFINEON IMT65R039M1HXUMA1 Silicon Carbide MOSFET, N Channel, 61 A, 650 V, 0.039 ohm, HSOF SP005716838
INFINEON IMT65R039M1HXUMA1 Silicon Carbide MOSFET, N Channel, 61 A, 650 V, 0.039 ohm, HSOF SP005716838
Product details
| MOSFET Module Configuration: - |
| Channel Type: N Channel |
| Continuous Drain Current Id: 61A |
| Drain Source Voltage Vds: 650V |
| Drain Source On State Resistance: 0.039ohm |
| Transistor Case Style: HSOF |
| No. of Pins: 8Pins |
| Rds(on) Test Voltage: 18V |
| Gate Source Threshold Voltage Max: 5.7V |
| Power Dissipation: 263W |
| Operating Temperature Max: 175°C |
| Product Range: CoolSiC Trench Series |
Other details
| Brand | INFINEON |
| Part Number | IMT65R039M1HXUMA1 |
| Quantity | Each (Supplied on Cut Tape) |
| Technical Data Sheet EN |  |
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.
$13.23
INFINEON IMT65R039M1HXUMA1 Silicon Carbide MOSFET, N Channel, 61 A, 650 V, 0.039 ohm, HSOF SP005716838—
$13.23
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INFINEON IMT65R039M1HXUMA1 Silicon Carbide MOSFET, N Channel, 61 A, 650 V, 0.039 ohm, HSOF SP005716838
Product details
| MOSFET Module Configuration: - |
| Channel Type: N Channel |
| Continuous Drain Current Id: 61A |
| Drain Source Voltage Vds: 650V |
| Drain Source On State Resistance: 0.039ohm |
| Transistor Case Style: HSOF |
| No. of Pins: 8Pins |
| Rds(on) Test Voltage: 18V |
| Gate Source Threshold Voltage Max: 5.7V |
| Power Dissipation: 263W |
| Operating Temperature Max: 175°C |
| Product Range: CoolSiC Trench Series |
Other details
| Brand | INFINEON |
| Part Number | IMT65R039M1HXUMA1 |
| Quantity | Each (Supplied on Cut Tape) |
| Technical Data Sheet EN | |
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.
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Description
Product details
| MOSFET Module Configuration: - |
| Channel Type: N Channel |
| Continuous Drain Current Id: 61A |
| Drain Source Voltage Vds: 650V |
| Drain Source On State Resistance: 0.039ohm |
| Transistor Case Style: HSOF |
| No. of Pins: 8Pins |
| Rds(on) Test Voltage: 18V |
| Gate Source Threshold Voltage Max: 5.7V |
| Power Dissipation: 263W |
| Operating Temperature Max: 175°C |
| Product Range: CoolSiC Trench Series |
Other details
| Brand | INFINEON |
| Part Number | IMT65R039M1HXUMA1 |
| Quantity | Each (Supplied on Cut Tape) |
| Technical Data Sheet EN | |
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.
