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INFINEON IMYH200R100M1HXKSA1 Silicon Carbide MOSFET, Single, N Channel, 26 A, 2 kV, 0.131 ohm, TO-247
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INFINEON IMYH200R100M1HXKSA1 Silicon Carbide MOSFET, Single, N Channel, 26 A, 2 kV, 0.131 ohm, TO-247

INFINEON IMYH200R100M1HXKSA1 Silicon Carbide MOSFET, Single, N Channel, 26 A, 2 kV, 0.131 ohm, TO-247

Product details

Technical Specifications

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MOSFET Module Configuration

Single

Continuous Drain Current Id
26A
Open menu
Drain Source On State Resistance
0.131ohm
Open menu
No. of Pins

4Pins

Gate Source Threshold Voltage Max

5.5V

Operating Temperature Max

175°C

SVHC

No SVHC (21-Jan-2025)

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Channel Type

N Channel

Drain Source Voltage Vds

2kV

Transistor Case Style

TO-247

Rds(on) Test Voltage

18V

Power Dissipation
217W
Open menu
Product Range

CoolsiC Series

Other details

Brand INFINEON
Part Number IMYH200R100M1HXKSA1
Quantity Each
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.
$7.19

Original: $23.98

-70%
INFINEON IMYH200R100M1HXKSA1 Silicon Carbide MOSFET, Single, N Channel, 26 A, 2 kV, 0.131 ohm, TO-247

$23.98

$7.19

INFINEON IMYH200R100M1HXKSA1 Silicon Carbide MOSFET, Single, N Channel, 26 A, 2 kV, 0.131 ohm, TO-247

Product details

Technical Specifications

Find similar products
MOSFET Module Configuration

Single

Continuous Drain Current Id
26A
Open menu
Drain Source On State Resistance
0.131ohm
Open menu
No. of Pins

4Pins

Gate Source Threshold Voltage Max

5.5V

Operating Temperature Max

175°C

SVHC

No SVHC (21-Jan-2025)

Find similar products
Channel Type

N Channel

Drain Source Voltage Vds

2kV

Transistor Case Style

TO-247

Rds(on) Test Voltage

18V

Power Dissipation
217W
Open menu
Product Range

CoolsiC Series

Other details

Brand INFINEON
Part Number IMYH200R100M1HXKSA1
Quantity Each
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.

Product Information

Shipping & Returns

Description

Product details

Technical Specifications

Find similar products
MOSFET Module Configuration

Single

Continuous Drain Current Id
26A
Open menu
Drain Source On State Resistance
0.131ohm
Open menu
No. of Pins

4Pins

Gate Source Threshold Voltage Max

5.5V

Operating Temperature Max

175°C

SVHC

No SVHC (21-Jan-2025)

Find similar products
Channel Type

N Channel

Drain Source Voltage Vds

2kV

Transistor Case Style

TO-247

Rds(on) Test Voltage

18V

Power Dissipation
217W
Open menu
Product Range

CoolsiC Series

Other details

Brand INFINEON
Part Number IMYH200R100M1HXKSA1
Quantity Each
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.
INFINEON IMYH200R100M1HXKSA1 Silicon Carbide MOSFET, Single, N Channel, 26 A, 2 kV, 0.131 ohm, TO-247 | Tanotis