✨ New Arrivals Just Dropped!Explore
Toshiba TK20E60WS1VX(S Power Mosfet N Channel 600 V 20 A 0.13 ohm TO-220 Through Hole
HomeStore

Toshiba TK20E60WS1VX(S Power Mosfet N Channel 600 V 20 A 0.13 ohm TO-220 Through Hole

Toshiba TK20E60WS1VX(S Power Mosfet N Channel 600 V 20 A 0.13 ohm TO-220 Through Hole

This is a TK20E60W,S1VX(S Power MOSFET , N Channel, 600 V, 20 A, 0.13 ohm, TO-220, Through Hole product from TOSHIBA with the model number TK20E60W,S1VX(S

Product details

Channel Type N Channel
Drain Source Voltage Vds 600V
Continuous Drain Current Id 20A
Drain Source On State Resistance 0.13ohm
Transistor Case Style TO-220
Transistor Mounting Through Hole
Rds(on) Test Voltage 10V
Gate Source Threshold Voltage Max 3.7V
Power Dissipation 165W
No. of Pins 3Pins
Operating Temperature Max 150°C
Product Range -
Qualification -

Other details

Brand TOSHIBA
Part Number TK20E60W,S1VX(S
Quantity Each
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.

$5.50
Toshiba TK20E60WS1VX(S Power Mosfet N Channel 600 V 20 A 0.13 ohm TO-220 Through Hole
$5.50

Toshiba TK20E60WS1VX(S Power Mosfet N Channel 600 V 20 A 0.13 ohm TO-220 Through Hole

This is a TK20E60W,S1VX(S Power MOSFET , N Channel, 600 V, 20 A, 0.13 ohm, TO-220, Through Hole product from TOSHIBA with the model number TK20E60W,S1VX(S

Product details

Channel Type N Channel
Drain Source Voltage Vds 600V
Continuous Drain Current Id 20A
Drain Source On State Resistance 0.13ohm
Transistor Case Style TO-220
Transistor Mounting Through Hole
Rds(on) Test Voltage 10V
Gate Source Threshold Voltage Max 3.7V
Power Dissipation 165W
No. of Pins 3Pins
Operating Temperature Max 150°C
Product Range -
Qualification -

Other details

Brand TOSHIBA
Part Number TK20E60W,S1VX(S
Quantity Each
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.

Product Information

Shipping & Returns

Description

This is a TK20E60W,S1VX(S Power MOSFET , N Channel, 600 V, 20 A, 0.13 ohm, TO-220, Through Hole product from TOSHIBA with the model number TK20E60W,S1VX(S

Product details

Channel Type N Channel
Drain Source Voltage Vds 600V
Continuous Drain Current Id 20A
Drain Source On State Resistance 0.13ohm
Transistor Case Style TO-220
Transistor Mounting Through Hole
Rds(on) Test Voltage 10V
Gate Source Threshold Voltage Max 3.7V
Power Dissipation 165W
No. of Pins 3Pins
Operating Temperature Max 150°C
Product Range -
Qualification -

Other details

Brand TOSHIBA
Part Number TK20E60W,S1VX(S
Quantity Each
Technical Data Sheet EN Download technical document - datasheet - Tanotis India

All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.

Toshiba TK20E60WS1VX(S Power Mosfet N Channel 600 V 20 A 0.13 ohm TO-220 Through Hole | Tanotis